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Differences In The Lithographic Impact Of Particles On The Pellicle Surface Depending On Type Of EUV Mask Pattern

Summary by Semiconductor Engineering
A new technical paper titled “Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types” was published by Hanyang University and Paul Scherrer Institute. Abstract “This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imagin…
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Semiconductor Engineering broke the news in on Friday, April 25, 2025.
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