Can 2D non-volatile memory take on SRAM?

PoX is able to write data at a speed of 400 picoseconds, about 25 billion operations per second, surpassing current memories such as DRAM or SRAM.

Chinese researchers claim fastest memory in graphene-based paper – Blocks and Files

Chinese researchers have developed a new type of storage-class memory based on graphene, claiming it outperforms both SRAM and DRAM in speed. A team of eight researchers are said to have developed the tech at Shanghai-based Fudan University, which made the strong claim: “It became the fastest semiconductor charge storage device currently known to humanity.” […]

R&D: Subnanosecond Flash Memory Enabled by 2D-enhanced Hot-carrier Injection

Nature has published an article written by Yutong Xiang, Chong Wang, Chunsen Liu, Tanjun Wang, Yongbo Jiang, State Key Laboratory of Integrated Chips and Systems, College of Integrated Circuits and Micro-Nano Electronics, Frontier Institute of Chip and System, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China, Yang Wang, State Key Laboratory of Integrated Chips […] The post R&D: Subnanosecond Flash Memory Enable…

Can 2D non-volatile memory take on SRAM?

Researchers in China have developed a non-volatile flash memory that can write in just 400ps, substantially less than the time it takes for today’s high speed SRAM memory. But can this take on SRAM in embedded chips?  The memory cell developed at the Fudan University in Shanghai uses a 2D structure with either a graphene […] The post Can 2D non-volatile memory take on SRAM? appeared first on eeNews Europe.