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CISM At Swansea Establishes UK’s First Capability For 4-inch Gallium Oxide Thin-film Growth

Summary by Plato. Vertical Search. Ai. | PlatoAiStream. Data Intelligence. Vertical Search. Ai.
News: Suppliers 31 March 2025 CISM at Swansea establishes UK’s first capability for 4-inch gallium oxide thin-film growth The Centre for Integrated Semiconductor Materials (CISM) at Swansea University in South Wales has used a newly commissioned AIXTRON close-coupled showerhead (CCS) deposition system to establish the first capability in the UK for growing gallium oxide (Ga2O3) thin films on 4-inch substrates, which have been tested and shown to…
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Plato. Vertical Search. Ai. | PlatoAiStream. Data Intelligence. Vertical Search. Ai.Plato. Vertical Search. Ai. | PlatoAiStream. Data Intelligence. Vertical Search. Ai.

CISM At Swansea Establishes UK’s First Capability For 4-inch Gallium Oxide Thin-film Growth

News: Suppliers 31 March 2025 CISM at Swansea establishes UK’s first capability for 4-inch gallium oxide thin-film growth The Centre for Integrated Semiconductor Materials (CISM) at Swansea University in South Wales has used a newly commissioned AIXTRON close-coupled showerhead (CCS) deposition system to establish the first capability in the UK for growing gallium oxide (Ga2O3) thin films on 4-inch substrates, which have been tested and shown to…

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Electronics WeeklyElectronics Weekly

Swansea University starts 4inch gallium oxide line for power research

Swansea University in Wales has installed gallium tri-oxide (Ga2O3) deposition equipment at its Centre for Integrated Semiconductor Materials (CISM). In the β crystal form, Ga2O3 is an ultra-wide bandgap semiconductor ... The post Swansea University starts 4inch gallium oxide line for power research appeared first on Electronics Weekly.

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Electronics Weekly broke the news in on Monday, March 31, 2025.
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